1 ELM33412CA-S general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient rja 130 c /w parameter symbol limit unit note gate-source voltage vgs 8 v continuous drain current ta=25c id 6 a ta=70c 5 pulsed drain current idm 25 a 3 avalanche current ias 21 a avalanche energy l=0.1mh eas 22 mj power dissipation ta=25c pd 1.0 w ta=70c 0.6 junction and storage temperature range tj, tstg -55 to 150 c ELM33412CA-S uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=20v ? id=6a ? rds(on) < 24m (vgs=4.5v) ? rds(on) < 32m (vgs=2.5v) ? rds(on) < 50m (vgs=1.8v) pin configuration circuit sot-23(top view) pin no. pin name 1 gate 2 source 3 drain s g d 1 2 3 4 - single n-channel mosfet
2 ELM33412CA-S electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 20 v zero gate voltage drain current idss vds=16v, vgs= 0v 1 a vds=10v, vgs= 0v, tj=70c 10 gate-body leakage current igss vds=0v, vgs=8v 100 na gate threshold voltage vgs(th) vds=vgs, id=250 a 0.5 0.8 1.0 v on state drain current id(on) vgs=4.5v, vds=10v 30 a 1 static drain-source on-resistance rds(on) vgs=4.5v, id= 6a 18 24 m 1 vgs = 2.5v, id =5 a 21 32 vgs = 1.8v, id =4 a 29 50 forward transconductance gfs vds = 5v, id =6 a 9 s 1 diode forward voltage vsd if = 6a, vgs=0v 1 v 1 max. body -diode continuous current is 1.4 a dynamic parameters input capacitance ciss vgs=0v, vds=10v, f=1mhz 1030 pf output capacitance coss 176 pf reverse transfer capacitance crss 126 pf switching parameters total gate charge qg vgs=4.5v, vds=10v, id=6a 13.2 nc 2 gate-source charge qgs 2.0 nc 2 gate-drain charge qgd 4.0 nc 2 turn - on delay time td(on) vgs=4.5v, vds=10v, id6a rgen=6 7 ns 2 turn - on rise time tr 13 ns 2 turn - off delay time td(off) 52 ns 2 turn - off fall time tf 16 ns 2 body diode reverse recovery time trr if=6a, dl/dt=100a/ s 14.1 ns body diode reverse recovery charge qrr 4.0 nc single n-channel mosfet ta=25 c note : 1. pulse test : pulsed width 300sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. 4 -
3 typical electrical and thermal characteristics ELM33412CA-S 4 - single n-channel mosfet out p ut characteristics i d , drain-to-source current(a) transfer characteristics i d , drain-to-source current(a) v gs , gate-to-source voltage(v) v ds , drain-to-source voltage(v) on-resistance vs temperature r ds(on) on-resistance(ohm) t j , junction temperature(?c) ca p acitance characteristic c , capacitance(pf) v ds , drain-to-source voltage(v) gate charge characteristics v gs , gate-to-source voltage(v) source-drain diode forward voltage i s , source current(a) qg , total gate charge(nc) v sd , source-to-drain voltage(v)
4 ELM33412CA-S single n-channel mosfet 4 - safe operating area single pulse maximum power dissipation i d , drain current(a) power(w) single pulse time(s) v ds , drain-to-source voltage(v) transient thermal res p onse curve r(t) , normalized effective transient thermal resistance t 1 , square wave pulse duration[sec]
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